| PART |
Description |
Maker |
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SC3906K |
High breakdown voltage.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| P6KE13A P6KE15A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
|
Shanghai Sunrise Electronics
|
| EE2-5NU EE2-12NUX-R EE2-12NUX-L EE2-12NUX EE2-12NU |
POWER/SIGNAL RELAY, DPDT, LATCHED, 12VDC (COIL), 2A (CONTACT), 220VDC (CONTACT), SURFACE MOUNT-STRAIGHT
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
Compact and lightweight High breakdown voltage Surface mounting type
Replaced by PCM1602A : 105dB SNR 6-Channel Audio DAC 48-LQFP
OSC 5V SMT PLAS 14X9 CMOS
105dB SNR 8-Channel Audio DAC 28-SSOP/QSOP -25 to 70
Replaced by PCM1754 : 97dB SNR Stereo DAC 14-SOIC
Replaced by PCM1609A : 105dB SNR 8-Channel Audio DAC 48-LQFP
105dB SNR 8-Channel Audio DAC 48-LQFP -25 to 85
Serial Interrupt Stream Deserializer 48-LQFP
Compact and lightweight, High breakdown voltage, Surface mounting type 小巧轻盈，击穿电压高，表面安装型
Replaced by PCM1798 : 106dB SNR Stereo DAC 28-SSOP 小巧轻盈，击穿电压高，表面安装型
Compact and lightweight/ High breakdown voltage/ Surface mounting type
|
NEC TOKIN CORP
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| P6KE |
Transient Voltage Suppressors Breakdown Voltage 6.8 to 440V
|
Rugao Dachang Electronics Co., Ltd
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PZTA42 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
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